Sensing range 5 mm 0.197 in (fixed)
Minimum sensing object 0.8 x 1.8 mm 0.031 x 0.071 in opaque object
Hysteresis 0.05 mm 0.002 in or less
Repeatability 0.03 mm 0.001 in or less
Supply voltage 5 to 24 V DC plus or minus 10 % Ripple P-P 10 % or less
Current consumption 15 mA or less
Output PNP open-collector transistor
Maximum source current: 50 mA
Applied voltage: 30 V DC or less (between output and + V)
Residual voltage: 0.7 V or less (at 50 mA source current), 0.4 V or less (at 16 mA source current)
Output:Output operation Incorporated with 2 outputs: Light-ON / Dark-ON
Response time Under light received condition: 20 micros or less
Under light interrupted condition: 100 micros or less
(Response frequency: 1 kHz or more)
Minimum sensing object 0.8 x 1.8 mm 0.031 x 0.071 in opaque object
Hysteresis 0.05 mm 0.002 in or less
Repeatability 0.03 mm 0.001 in or less
Supply voltage 5 to 24 V DC plus or minus 10 % Ripple P-P 10 % or less
Current consumption 15 mA or less
Output PNP open-collector transistor
Maximum source current: 50 mA
Applied voltage: 30 V DC or less (between output and + V)
Residual voltage: 0.7 V or less (at 50 mA source current), 0.4 V or less (at 16 mA source current)
Output:Output operation Incorporated with 2 outputs: Light-ON / Dark-ON
Response time Under light received condition: 20 micros or less
Under light interrupted condition: 100 micros or less
(Response frequency: 1 kHz or more)