IGBT-INVERTER MODULE
INSULATED GATE BIPOLAR TRANSISTOR
FEATURES LOW SWITCHING LOSSES
TVJ OP = 150 C
VCE SAT WITH POSITIVE TEMPERATURE COEFFICIENT
LOW VCE SAT
75A I(C)
1200V
V(BR)CES
N-CHANNEL
INSULATED GATE BIPOLAR TRANSISTOR
FEATURES LOW SWITCHING LOSSES
TVJ OP = 150 C
VCE SAT WITH POSITIVE TEMPERATURE COEFFICIENT
LOW VCE SAT
75A I(C)
1200V
V(BR)CES
N-CHANNEL